Cover Image

Ferroelectric-Gate Field Effect Transistor Memories Device Physics and Applications /

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics an...

Full description

Corporate Author: SpringerLink (Online service)
Other Authors: Park, Byung-Eun. (Editor, http://id.loc.gov/vocabulary/relators/edt), Ishiwara, Hiroshi. (Editor, http://id.loc.gov/vocabulary/relators/edt), Okuyama, Masanori. (Editor, http://id.loc.gov/vocabulary/relators/edt), Sakai, Shigeki. (Editor, http://id.loc.gov/vocabulary/relators/edt), Yoon, Sung-Min. (Editor, http://id.loc.gov/vocabulary/relators/edt)
Language:English
Published: Dordrecht : Springer Netherlands : Imprint: Springer, 2016.
Edition:1st ed. 2016.
Series:Topics in Applied Physics, 131
Subjects:
Electronic circuits.
Electronics.
Microelectronics.
Materials—Surfaces.
Thin films.
Surfaces (Physics).
Interfaces (Physical sciences).
Electronic Circuits and Devices.
Electronics and Microelectronics, Instrumentation.
Surfaces and Interfaces, Thin Films.
Circuits and Systems.
Surface and Interface Science, Thin Films.
Online Access:https://doi.org/10.1007/978-94-024-0841-6

Internet

https://doi.org/10.1007/978-94-024-0841-6

Similar Items