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High Mobility and Quantum Well Transistors Design and TCAD Simulation /

For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to...

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Main Authors: Hellings, Geert. (Author, http://id.loc.gov/vocabulary/relators/aut), De Meyer, Kristin. (http://id.loc.gov/vocabulary/relators/aut)
Corporate Author: SpringerLink (Online service)
Language:English
Published: Dordrecht : Springer Netherlands : Imprint: Springer, 2013.
Edition:1st ed. 2013.
Series:Springer Series in Advanced Microelectronics, 42
Subjects:
Electronic circuits.
Optical materials.
Electronic materials.
Semiconductors.
Nanotechnology.
Electronic Circuits and Devices.
Circuits and Systems.
Optical and Electronic Materials.
Nanotechnology and Microengineering.
Online Access:https://doi.org/10.1007/978-94-007-6340-1
Table of Contents:
  • List of Abbreviations and Symbols
  • 1 Introduction
  • 2 S/D Junctions in Ge: experimental
  • 3 TCAD Simulation and Modeling of Ion Implants in Germanium
  • 4 Electrical TCAD Simulations and Modeling in Germanium
  • 5 Investigation of Quantum Well Transistors for Scaled Technologies
  • 6 Implant-Free Quantum Well FETs: Experimental investigation
  • 7 Conclusions Future Work and Outlook
  • Bibliography
  • List of Publications.

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