CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies Process-Aware SRAM Design and Test /

As technology scales into nano-meter region, design and test of Static Random Access Memories (SRAMs) becomes a highly complex task. Process disturbances and various defect mechanisms contribute to the increasing number of unstable SRAM cells with parametric sensitivity. Growing sizes of SRAM arrays...

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Main Authors: Pavlov, Andrei. (Author, http://id.loc.gov/vocabulary/relators/aut), Sachdev, Manoj. (http://id.loc.gov/vocabulary/relators/aut)
Corporate Author: SpringerLink (Online service)
Language:English
Published: Dordrecht : Springer Netherlands : Imprint: Springer, 2008.
Edition:1st ed. 2008.
Series:Frontiers in Electronic Testing, 40
Subjects:
Online Access:https://doi.org/10.1007/978-1-4020-8363-1
Table of Contents:
  • and Motivation
  • SRAM Circuit Design and Operation
  • SRAM Cell Stability: Definition, Modeling and Testing
  • Traditional SRAM Fault Models and Test Practices
  • Techniques for Detection of SRAM Cells with Stability Faults
  • Soft Errors in SRAMs: Sources, Mechanisms and Mitigation Techniques.