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Einstein's Photoemission Emission from Heavily-Doped Quantized Structures /

This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stres...

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Main Author: Ghatak, Kamakhya Prasad. (Author, http://id.loc.gov/vocabulary/relators/aut)
Corporate Author: SpringerLink (Online service)
Language:English
Published: Cham : Springer International Publishing : Imprint: Springer, 2015.
Edition:1st ed. 2015.
Series:Springer Tracts in Modern Physics, 262
Subjects:
Quantum physics.
Lasers.
Photonics.
Optical materials.
Electronic materials.
Nanoscale science.
Nanoscience.
Nanostructures.
Nanotechnology.
Quantum Physics.
Optics, Lasers, Photonics, Optical Devices.
Optical and Electronic Materials.
Nanoscale Science and Technology.
Online Access:https://doi.org/10.1007/978-3-319-11188-9
Table of Contents:
  • From the Contents: Part I Influence of Quantum Confinement on the EP from Non-Parabolic Semiconductors
  • The EP from Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors
  • Part II The EP from HD III-V Semiconductors and Their Quantized Counter Parts
  • The EP from HD Kane Type Semiconductors.

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